Extended Methodologies for Using Extreme Value Statistic for SRAM VminPompl · IEEE Transactions on Device and Materials Reliability2019PDF1.0 MB
Comprehensive Methodology for the Statistic of SRAM VminPompl · IEEE Transactions on Device and Materials Reliability2015PDF923 KB
Correction to “Comprehensive Methodology for the Statistic of SRAM Vmin”Pompl · IEEE Transactions on Device and Materials Reliability2015PDF32 KB
Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM VMINBoley · Journal of Low Power Electronics and Applications2012PDF296 KB
28nm FDSOI Technology sub-0.6V SRAM Vmin Assessment for Ultra Low Voltage ApplicationsRanica2016PDF984 KB
Temperature dependence of the switching property in τVmin mode ferroelectric liquid crystalsSako · American Institute of Physics1999PDF331 KB
Robust Initialization of Rigorous Process Simulations of Multiple Dividing Wall Columns via Vmin DiagramsRänger · ChemEngineering2018PDF2.7 MB
T - Vmin Addressing Mode and an Improved Equivalent Circuit Model for Ferroelectric Liquid Crystal DisplaysWang · The Institution of Engineering and Technology2007PDF320 KB