On the common-emitter breakdown voltage of bipolar junction transistors : Sheng-Lyang Jang. Solid-State Electronics, 36(2), 213 (1993)Elsevier ScienceElsevier Science1993DOI 10.1016/0026-2714(93)90457-a
A model of 1/f noise in polysilicon resistors: Sheng-Lyang Jang. Solid-St. Electron.33(9), 1155 (1990)Elsevier ScienceElsevier Science1992DOI 10.1016/0026-2714(92)90237-f
Comment on “analytical Low-frequency 1/f Noise Model for Lightly-Doped-Drain MOSFETs Operating in the Linear Region” by Sheng-Lyang JangArthur D. van RheenenElsevier Science1994DOI 10.1016/0038-1101(94)90186-4
Breakdown Characteristics of Emitter-base and Collector-base Junctions of Silicon Bipolar Junction Transistors : Sheng-Lyang Jang and Kuang-Lang Chern. Solid-St. Electron. 35, 615 (1992)Microelectronics ReliabilityMicroelectronics Reliability1992DOI 10.1016/0026-2714(92)90284-r
