The use of a four-point probe for profiling sub-micron layers : R. S. Huang and P. H. Ladbrooke. Solid-St. Electron. 21, 1123 (1978)Microelectronics Reliability1979PDF244 KB
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers : R. S. Huang and P. H. Ladbrooke. Solid-St. Electron Devices3, 29 (March 1979)Microelectronics Reliability1979PDF132 KB
Fast current pulse m.o.s. deep-depletion technique for profiling thin epitaxial and ion-implanted layers : P. H. Ladbrooke, R. S. Huang and J. A. Barnard, Solid-St. Electron Devices2, (4) 104 (July 1978)Microelectronics Reliability1978PDF64 KB