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Hot-Carrier Reliability of MOS VLSI Circuits by Yusuf Leblebici, Sung-Mo (Steve) Kang (auth.) is a nonfiction available to read on EtoBox.

What is Hot-Carrier Reliability of MOS VLSI Circuits about?

As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada­ tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down­ ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucia

Who reads Hot-Carrier Reliability of MOS VLSI Circuits?

Author

Yusuf Leblebici, Sung-Mo (Steve) Kang (auth.)

Publisher

Springer US

Published

1993

Language

EN

ISBN

9780792393528

Category

nonfiction

Subjects

Engineering, Stem