Can I read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) on EtoBox?
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) by Zhiqiang Li (auth.) is a engineering available to read on EtoBox.
What is The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) about?
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, r
Who reads The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses)?
It is typically read by working professionals who need an authoritative practice reference.
Common subject areas: medicine, law, business, engineering.
- Author
- Zhiqiang Li (auth.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Published
- 2016
- Language
- EN
- ISBN
- 9783662496817
- Category
- engineering
- Subjects
- Engineering, Science, Physics
- Updated
- 2026-03-25