Can I read The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices || on EtoBox?
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices || by Zhiqiang Li (auth.) is a nonfiction available to read on EtoBox.
What is The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices || about?
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Who reads The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices ||?
It is typically read by self-directed learners exploring a subject in depth.
Common subject areas: history, science, philosophy, social sciences.
- Author
- Zhiqiang Li (auth.)
- Publisher
- Springer Berlin Heidelberg : Imprint: Springer
- Published
- 2016
- Language
- EN
- ISBN
- 9783662496817
- Category
- nonfiction
- Subjects
- Science, Engineering, Physics