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Can I read Low Power and Reliable SRAM Memory Cell and Array Design (Springer Series in Advanced Microelectronics Book 31) on EtoBox?
Low Power and Reliable SRAM Memory Cell and Array Design (Springer Series in Advanced Microelectronics Book 31) by Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi Osada (eds.) is a engineering available to read on EtoBox.
What is Low Power and Reliable SRAM Memory Cell and Array Design (Springer Series in Advanced Microelectronics Book 31) about?
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Who reads Low Power and Reliable SRAM Memory Cell and Array Design (Springer Series in Advanced Microelectronics Book 31)?
It is typically read by working professionals who need an authoritative practice reference.
Common subject areas: medicine, law, business, engineering.
- Author
- Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi Osada (eds.)
- Publisher
- Springer-Verlag Berlin Heidelberg; Springer
- Published
- 2011
- Language
- EN
- ISBN
- 9786613366665
- Category
- engineering
- Subjects
- Engineering, Engineering (General), Electrical
- Updated
- 2026-03-25
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