Can I read Low Power and Reliable SRAM Memory Cell and Array Design Volume 31 || on EtoBox?

Low Power and Reliable SRAM Memory Cell and Array Design Volume 31 || by Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi Osada (eds.) is a nonfiction available to read on EtoBox.

What is Low Power and Reliable SRAM Memory Cell and Array Design Volume 31 || about?

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Who reads Low Power and Reliable SRAM Memory Cell and Array Design Volume 31 ||?

Author

Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi Osada (eds.)

Publisher

Springer Berlin Heidelberg : Imprint: Springer

Published

2011

Language

EN

ISBN

9783642195686

Category

nonfiction

Subjects

Engineering, Stem