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A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS) by C. Nyamhere; M. Das; F. D. Auret; A. Chawanda is a Engineering article available to read on EtoBox.

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## Abstract This paper presents the electrical characteristics of electron irradiation induced defects in n‐type germanium doped with antimony (Sb) by deep level transient spectroscopy (DLTS) and Laplace‐ DLTS. The following electrons traps at 0.15 eV, 0.20 eV, 0.21 eV 0.23 eV, 0.31 eV and 0.38 eV below the conduction band were observed and two hole traps at 0.09 eV and 0.31 eV above the valence band were also recorded. The electron trap level at 0.38 eV is the E – center and is the most dominant electron trap for our measurements. The capacitance versus temperature and current versus temperature characteristics of our samples showed good correlation as the irradiation dose is increased. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

C. Nyamhere; M. Das; F. D. Auret; A. Chawanda

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)