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What is AI Assisted Field Plate Design of GaN HEMT Device about?

This document presents a novel approach for AI-assisted design of field plates in GaN HEMT devices, aimed at optimizing performance while ensuring reliability. The proposed framework integrates machine learning with technology computer-aided design (TCAD) to streamline the design process, transforming complex field plate geometries into a simplified feature space. This methodology is adaptable to various semiconductor devices, enhancing design efficiency and functionality across the field.

Author

qh huang

Language

EN