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Scope and purpose The benefits of wide-bandgap silicon carbide (SiC) semiconductors arise from their higher breakthrough electric field, larger thermal conductivity, higher electron-saturation velocity and lower intrinsic carrier concentration compared to silicon (Si). Based on these SiC material advantages, SiC MOSFETs are becoming an attractive switching transistor for high-power applications, such as solar inverters and off-board electric vehicles (EV) chargers. T

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Anonymous R0s4q9X8

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EN