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Can I read Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS on EtoBox?
Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS by C Pollak; K Reichmann; H Hutter is a Engineering article available to read on EtoBox.
What is Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS about?
Chemical solution-deposited multilayer systems of SrTiO (STO)yXyPtyTiO ySiO ySi wwhere XsLaNiO (LNO), La Sr CoO (LSCO), La Sr MnO (LSMO)x were investigated by dynamic secondary-ion mass spectrometry (SIMS). The 0.5 0.5 3 0.7 0.3 3 STO layer is intended to serve as a dielectric layer for a capacitor, the conducting layers 'X' are a buffer layer intended to eliminate fatigue effects, which usually occur at the PtySTO interface. Depth profiles of the main components were obtained, revealing intense diffusion processes, which must have occurred during the depositionycrystallisation processes. Furthermore, Al impurities from the substrate, most probably originating from the Pt-sputter process, are preferentially found at the interfaces. Ti is found to diffuse from the (isolating) STO layer into the conductive 'X' oxide layers, where a region of constant concentration is observable in all three sample systems.
Who reads Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C Pollak; K Reichmann; H Hutter
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)