About this document
2-nm Nano-Sheet FET Technology Overview by Gary Ryan Donovan is a document available to read on EtoBox.
This document introduces the 2-nm/20Å technology node in the simulation software Microwind. It describes the nano-sheet field-effect transistor (NS-FET) design and implementation of buried power rails and nano through-silicon vias. Performance analysis is presented for basic cells, sequential cells, a ring oscillator, and a 6-transistor static random-access memory. The goal is to illustrate the increased performance and scaling capabilities of the 2-nm technology node.
- Author
- Gary Ryan Donovan
- Language
- EN