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The experiment focused on studying the DC characteristics of n-MOSFET, p-MOSFET, and CMOS inverter, including their threshold, pinch off, and early voltages. Results showed threshold voltages of 2.8093 V for n-MOSFET and 3.6842 V for p-MOSFET, with theoretical early voltages indicating ideal behavior. The findings highlight the differences between theoretical and practical behaviors of MOSFETs due to non-ideal effects.

Author

thawaigenome2005

Language

EN