About this Materials Science article
Improvement of the crystallinity of a CdxZn1−xTe epitaxial film grown on a GaAs substrate using a ZnTe buffer layer by T.W. Kim; H.L. Park; J.Y. Lee is a Materials Science article available to read on EtoBox.
The effects of a ZnTe buffer layer on the structural and the optical properties of the CdxZn 1 \_~Te films were investigated using CdxZn 1 \_xTe epilayers on GaAs (100) substrates with and withOut ZnTe buffer layer s. X-ray diffraction measurements showed ttiat th e grown layers were CdxZn I \_xTe epitaxial films. Photoluminescence and transmission electron microscopy measurements showed that the crystallinity quality of the Cd~Zn I xTe epilayers grown on the GaAs substrates was remarkably improved using the ZnTe buffer. These results suggest that CdxZnl\_xTe epitaxial films grown on GaAs substrates with ZnTe buffers by a simple technique can be used for applications as buffer layers for high-quality HgxCdl\_xTe layers.
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- Author
- T.W. Kim; H.L. Park; J.Y. Lee
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 1997
- Language
- EN
- Field
- Materials Science (Physical Sciences)