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Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class by Brand, Christian; Hucht, Alfred; Mehdipour, Hamid; Jnawali, Giriraj; Fortmann, Jonas D.; Tajik, Mohammad; Hild, Rüdiger; Sothmann, Björn; Kratzer, Peter; Schützhold, Ralf; Hoegen, Michael Horn-von is a scholarly article available to read on EtoBox.

What is Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class about?

The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\

Author

Brand, Christian; Hucht, Alfred; Mehdipour, Hamid; Jnawali, Giriraj; Fortmann, Jonas D.; Tajik, Mohammad; Hild, Rüdiger; Sothmann, Björn; Kratzer, Peter; Schützhold, Ralf; Hoegen, Michael Horn-von

Published

2023

Language

EN