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What is 12T SRAM Design for Space Reliability about?

The paper presents a novel 12T SRAM cell design (WWL12T) utilizing FinFET technology for enhanced stability and reliability in space applications, addressing challenges such as device variations and low supply voltages. The design incorporates a dual-k gate insulator and additional word lines to improve performance and mitigate read/write conflicts, achieving better static noise margins compared to existing SRAM cells. This research highlights the importance of developing resilient SRAMs for critical applic

Author

sushmangowda9

Language

EN