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About this Engineering article
Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics by Hong Yu Yu; Singanamalla, R.; Simoen, E.; Xiaoping Shi; Lauwers, A.; Kittl, J.A.; Van Elshocht, S.; Kristin De Meyer; Absil, P.; Jurczak, M.; Biesemans, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hong Yu Yu; Singanamalla, R.; Simoen, E.; Xiaoping Shi; Lauwers, A.; Kittl, J.A.; Van Elshocht, S.; Kristin De Meyer; Absil, P.; Jurczak, M.; Biesemans, S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)