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What is EE669 L3 M2 Crystal Growth about?
The document discusses the various polytypes of Silicon Carbide (SiC) and their distinct electrical properties, highlighting the most common ones used in electronics. It also covers crystal defects, including point defects like vacancies and interstitials, as well as higher-order defects such as dislocations and stacking faults. Additionally, it explains the effects of thermal stress on defect formation in silicon processing.
- Author
- anand raj
- Language
- EN