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YGW60N65F1 IGBT Datasheet Overview by Toader Marcu is a document available to read on EtoBox.

This document provides specifications for an IGBT transistor with part number YGW60N65F1A2. It has a high breakdown voltage of 650V and can handle currents up to 60A. Key features include trench gate technology, low saturation voltage, and easy parallel switching capability. Typical applications include UPS systems, inverters, welding converters, and power factor correction circuits. The document provides detailed maximum ratings, electrical characteristics, switching characteristics, and thermal properties

Author

Toader Marcu

Language

EN