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Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide by Weibin Qiu; Wei Wang; Jie Dong; Fan Zhou; Jingyuan Zhang is a Engineering article available to read on EtoBox.

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The growth pressure and mask width dependent thickness enhancement factors of selective-area MOCVD growth were investigated in this article. A high enhancement of 5.8 was obtained at 130 mbar with the mask width of 70 mm. Mismatched InGaAsP (À0.5%) at the maskless region which could ensure the material at butt-joint region to be matched to InP was successively grown by controlling the composition and mismatch modulation in the selective-area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously in separated confined heterostructure 1.55 mm distributed feedback laser, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. A narrow beam of 9 and 12 in the vertical and horizontal directions, a low threshold current of 6.5 mA was fabricated by using this technique.

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Author

Weibin Qiu; Wei Wang; Jie Dong; Fan Zhou; Jingyuan Zhang

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2003

Language

EN

Field

Engineering (Physical Sciences)