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What is THz Emission from GaN HEMT Analysis about?
This document describes a numerical study of terahertz emission from a gallium nitride high electron mobility transistor (GaN HEMT) using coupled hydrodynamic-Maxwell equations. The model considers the two-dimensional electron gas in the GaN HEMT and solves the coupled equations using finite difference time domain methods on gradient non-uniform grids to reduce calculation time. Simulation results show the temporal dependence of source current and current distribution along the channel at different times, d
- Author
- rsrinivasavaradan
- Language
- EN