Opening book details…
About this Engineering article
Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiN x Interlayer Grown by MOCVD by Siddique, Anwar; Ahmed, Raju; Anderson, Jonathan; Nazari, Mohammad; Yates, Luke; Graham, Samuel; Holtz, Mark; Piner, Edwin L. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Siddique, Anwar; Ahmed, Raju; Anderson, Jonathan; Nazari, Mohammad; Yates, Luke; Graham, Samuel; Holtz, Mark; Piner, Edwin L.
- Publisher
- American Chemical Society; American Chemical Society (ACS) (ISSN 2637-6113)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)