About this scholarly article

International Technical Digest on Electron Devices Meeting - Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs by Yamada, T.; Samata, S.; Takato, H.; Matsushita, Y.; Hieda, K.; Nitayama, A.; Horiguchi, F.; Masuoka, F. is a scholarly article available to read on EtoBox.

Author

Yamada, T.; Samata, S.; Takato, H.; Matsushita, Y.; Hieda, K.; Nitayama, A.; Horiguchi, F.; Masuoka, F.

Publisher

IEEE

Published

1989