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Dry Etching of Germanium with Laser Induced Reactive Micro Plasma by Martin Ehrhardt; Pierre Lorenz; Jens Bauer; Robert Heinke; Mohammad Afaque Hossain; Bing Han; Klaus Zimmer is a Engineering article available to read on EtoBox.

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## Abstract High-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapphire laser (λ = 775 nm, E~Pulse/max.~ = 1 mJ, t = 150 fs, f~rep.~ = 1 kHz) has been used, after focusing with a 60 mm lens, for igniting a temporary plasma in a CF~4~/O~2~ gas at near atmospheric pressure. Typical etching rate of approximately ~ 100 nm / min and a surface roughness of less than 11 nm rms were found. The etching results were studied in dependence on laser pulse energy, etching time, and plasma – surface distance. The mechanism of the etching process is expected to be of chemical nature by the formation of volatile products from the chemical reaction of laser plasma activated

Who reads Dry Etching of Germanium with Laser Induced Reactive Micro Plasma?

Author

Martin Ehrhardt; Pierre Lorenz; Jens Bauer; Robert Heinke; Mohammad Afaque Hossain; Bing Han; Klaus Zimmer

Publisher

Springer Science and Business Media LLC

Published

2021

Language

EN

Field

Engineering (Physical Sciences)