Can I read Pressure-induced charge distribution effect on superconducting critical temperature of HgBa2Ca2Cu3O8+δ on EtoBox?

Pressure-induced charge distribution effect on superconducting critical temperature of HgBa2Ca2Cu3O8+δ by H.M. Shao; S.A. Aruna; C.J. Wang; M.S. Zhuo; X.L. Sun; Y.M. Cai; X.X. Yao is a Physics and Astronomy article available to read on EtoBox.

What is Pressure-induced charge distribution effect on superconducting critical temperature of HgBa2Ca2Cu3O8+δ about?

According to the local density approximation for electronic structure calculations, the doping level of CuO2 layer does increase under pressure by a relatively small amount, less than 0.02 additional holes per Cu atom at 9.2GPa. Thus, it seems necessary to consider mechanisms other than changes in doping level for the increase of T~ under pressure. Based on the data obtained from the powder neutron diffraction experiments up to a pressure of 8.5GPa, we have calculated the valences of Cu and the pressure-induced change of the hole concentration in the inner and outer CuO2 layers in Hg-1223 samples by using the method of Bond Valence Sums (BVS). The results are rather good and could provide a possible explanation for the large increase of superconducting critical temperature in this material under pressure.

Who reads Pressure-induced charge distribution effect on superconducting critical temperature of HgBa2Ca2Cu3O8+δ?

Author

H.M. Shao; S.A. Aruna; C.J. Wang; M.S. Zhuo; X.L. Sun; Y.M. Cai; X.X. Yao

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4534)

Published

2000

Language

EN

Field

Physics and Astronomy (Physical Sciences)