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About this Engineering article
Silicon-oxide-nitride-oxide-silicon-type flash memory with a high-k NdTiO3 charge trapping layer by Pan, Tung-Ming ;Yu, Te-Yi is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Pan, Tung-Ming ;Yu, Te-Yi
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)