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Temperature dependence of the phosphorus segregation at the twin boundary in an Fe–4 at.% Si alloy by P. Lejček; S. Hofmann is a Engineering article available to read on EtoBox.

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## Abstract AES of in __situ__ fractured bicrystals of an Fe–4 at.% Si alloy containing traces of phosphorus was used to study the temperature dependence of the segregation at the symmetrical {112} (coherent twin) grain boundary between 773 and 1173 K. The observed enrichment of P decreases with temperature, whereas that of Si increases slightly. This behaviour is described by a mutual repulsive interaction coefficient α′ = 92 kJ mol^−1^ of P and Si and the corre‐sponding pure binary segregation enthalpies Δ__H__0~P~ = −7.9 kJ mol^−1^ and Δ__H__0~Si~ = −3.0 kJ mol^−1^, the absolute values of which are considerably lower than those reported for polycrystalline samples of FeP and FeSi. The differences are explained on the basis of orientation, concentration and interaction effects.

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Author

P. Lejček; S. Hofmann

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)

Published

1990

Language

EN

Field

Engineering (Physical Sciences)