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About this Engineering article
Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs by Burke, Peter G.; Ismer, Lars; Lu, Hong; Frantz, Elan; Janotti, Anderson; Van de Walle, Chris G.; Bowers, John E.; Gossard, Arthur C. is a Engineering article available to read on EtoBox.
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- Author
- Burke, Peter G.; Ismer, Lars; Lu, Hong; Frantz, Elan; Janotti, Anderson; Van de Walle, Chris G.; Bowers, John E.; Gossard, Arthur C.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2012
- Field
- Engineering (Physical Sciences)