About this scholarly article

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop by Marcon, D.; Viaene, J.; Favia, P.; Bender, H.; Kang, X.; Lenci, S.; Stoffels, S.; Decoutere, S. is a scholarly article available to read on EtoBox.

Author

Marcon, D.; Viaene, J.; Favia, P.; Bender, H.; Kang, X.; Lenci, S.; Stoffels, S.; Decoutere, S.

Publisher

IEEE

Published

2013

Language

EN