Opening book details…
About this scholarly article
2005 International Conference On Simulation of Semiconductor Processes and Devices - Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials by Brown, A.R.; Watling, J.R.; Asenov, A.; Bersuker, G.; Zeitzoff, P. is a scholarly article available to read on EtoBox.
- Author
- Brown, A.R.; Watling, J.R.; Asenov, A.; Bersuker, G.; Zeitzoff, P.
- Publisher
- IEEE
- Published
- 2005
- Language
- EN
More by Brown, A.R.; Watling, J.R.; Asenov, A.; Bersuker, G.; Zeitzoff, P.
Browse all works by Brown, A.R.; Watling, J.R.; Asenov, A.; Bersuker, G.; Zeitzoff, P.