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About this Materials Science article
Diamond solution‐gated field effect transistors: Properties and bioelectronic applications by Dankerl, Markus ;Hauf, Moritz V. ;Stutzmann, Martin ;Garrido, Jose A. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Dankerl, Markus ;Hauf, Moritz V. ;Stutzmann, Martin ;Garrido, Jose A.
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2012
- Field
- Materials Science (Physical Sciences)
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