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About this Materials Science article
Defect model of charge transfer doping at a-SiNx:H/a-Si:H interfaces by J. Robertson; M.J. Powell is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- J. Robertson; M.J. Powell
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-3093)
- Published
- 1985
- Language
- EN
- Field
- Materials Science (Physical Sciences)