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About this Physics and Astronomy article

Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs by Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata is a Physics and Astronomy article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Physics and Astronomy.

Author
Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata
Publisher
Springer-Verlag; Indian Physical Society; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 0019-5480)
Published
2016
Field
Physics and Astronomy (Physical Sciences)