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Numerical analysis of SOI LDMOS using a recessed source and a trench drain by S.-J Yoo; S.-H Kim; Y.-I Choi; S.-K Chung is a Engineering article available to read on EtoBox.

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A new SOI LDMOS using a recessed source and a trench drain was proposed to improve the on-characteristics at a given breakdown voltage. On-resistance and breakdown voltages of the proposed LDMOS are investigated by the two-dimensional simulator, MEDICI. The simulation results show that the on-resistance of the proposed and the conventional LDMOS are 76.3 and 129.5 mV mm 2 , respectively. The on-resistance of the proposed LDMOS decreases by 41% compared to that of the conventional LDMOS at the same breakdown voltage of 36.5 V.

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Author

S.-J Yoo; S.-H Kim; Y.-I Choi; S.-K Chung

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)