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About this Engineering article
First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET by Gupta, Chirag; Chan, Silvia H.; Agarwal, Anchal; Hatui, Nirupam; Keller, Stacia; Mishra, Umesh K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gupta, Chirag; Chan, Silvia H.; Agarwal, Anchal; Hatui, Nirupam; Keller, Stacia; Mishra, Umesh K.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2017
- Field
- Engineering (Physical Sciences)