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This study investigates the performance of Dual-Metal-InAs-GaSb Vertical Tunnel Field Effect Transistors (VTFETs) with various gate dielectric materials, revealing that ZrO2 and HfO2 significantly enhance drain current and transconductance. The proposed device configuration demonstrates a 1.5-fold increase in ON current and a threefold boost in transconductance compared to Ge-Si VTFETs. Numerical simulations indicate that the DM-InAs-GaSb VTFET with drain extension exhibits the highest performance, making i

Author
Eswaran P
Language
EN

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