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24.4 W MM X-Band GaN HEMTs On AlN Substrates With The LPCVD-Grown High-Breakdown-Field SiNx Layer by N Manikanthababu is a document available to read on EtoBox.

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This paper presents a record-high output power density of 24.4 W/mm for AlGaN/GaN HEMTs on AlN substrates, achieved through advanced fabrication techniques including a high-density SiNx layer and optimized buffer structures. The devices demonstrated high drain current operation of 1.4 A/mm and a breakdown voltage of 258 V, indicating significant improvements in performance compared to previous HEMT technologies. The findings suggest the potential of these GaN HEMTs for next-generation high-power radio frequ

Author

N Manikanthababu

Language

EN