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About this Engineering article
Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions by Cheng, Chi-Yin; Vasileska, Dragica is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Cheng, Chi-Yin; Vasileska, Dragica
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2020
- Field
- Engineering (Physical Sciences)