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Study on Preventing Segregation of Erbium Atoms to a Silicon Surface by Annealing in Oxygen Atmosphere at High Temperature by Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang is a Engineering article available to read on EtoBox.

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The damage produced by implantation of Er ions of 400 keV at a fluence of 5 Â 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after annealing in oxygen and nitrogen atmospheres successively at 1000 °C, and only a small portion of the Er atoms segregated to the silicon surface. Most of the Er atoms diffused to deeper depths because of the affinity of Er for oxygen.

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Author

Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0168-583X)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)