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Toshiba TPC8017-H MOSFET Specifications by wecemin200 is a document available to read on EtoBox.
The TPC8017-H is a Toshiba Silicon N Channel MOS Field Effect Transistor designed for high-efficiency DC/DC converter applications with a small footprint and high-speed switching capabilities. It features a low ON-resistance of 5.1 mΩ, a maximum drain-source voltage of 30V, and a maximum drain current of 15A. The device is sensitive to electrostatic discharge and should be handled with care to maintain reliability.
- Author
- wecemin200
- Language
- EN