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About this Engineering article
Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition by Huang, H. Y.; Lin, W. C.; Lee, W. H.; Shu, C. K.; Liao, K. C.; Chen, W. K.; Lee, M. C.; Chen, W. H.; Lee, Y. Y. is a Engineering article available to read on EtoBox.
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- Author
- Huang, H. Y.; Lin, W. C.; Lee, W. H.; Shu, C. K.; Liao, K. C.; Chen, W. K.; Lee, M. C.; Chen, W. H.; Lee, Y. Y.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)