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Charge Carrier Scattering on Neutral Centres in n-Si by N. N. Dmitrenko; P. M. Kurilo; P. G. Litovchenko; V. S. Lutsyak; V. M. Nitsovich is a Physics and Astronomy article available to read on EtoBox.

What is Charge Carrier Scattering on Neutral Centres in n-Si about?

## Abstract A discussion of the basic models for the calculation of the relaxation time for scattering on neutral impurities is given. A comparison is made between the experimental results of scattering of electrons on neutral oxygen atoms in __n__‐Si and the theoretical data obtained on the basis of three models. It is shown that an S‐partial wave approximation with a phase shift linear in the momentum, taking into account Friedel's sum rules and the many‐channel scattering in many‐valley semi‐conductors, gives a good agreement with experimental results for impurity concentrations from 10^13^ to 10^17^ cm^−3^ in the temperature interval 77 to 300 K.

Who reads Charge Carrier Scattering on Neutral Centres in n-Si?

Author

N. N. Dmitrenko; P. M. Kurilo; P. G. Litovchenko; V. S. Lutsyak; V. M. Nitsovich

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

1980

Language

EN

Field

Physics and Astronomy (Physical Sciences)