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What is Arrhenius Analysis of SiO2 Defect Passivation about?
The document discusses reactive ion etching (RIE) conditions that impact the degree of anisotropy. It states that increasing plasma ion bombardment energy, O2 percentage, or chamber pressure will decrease the degree of anisotropy, while increasing the distance between electrodes or adding H2 to the CF4+O2 plasma will increase the degree of anisotropy. Brief explanations are provided for how each condition affects the horizontal and vertical etch rates.
- Author
- Mrinmoy Dey
- Language
- EN