Opening book details…
About this Engineering article
InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling by Park, Y. M.; Son, J. K.; Chung, H. J.; Sone, C.; Park, Y. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Park, Y. M.; Son, J. K.; Chung, H. J.; Sone, C.; Park, Y.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by Park, Y. M.; Son, J. K.; Chung, H. J.; Sone, C.; Park, Y.
Browse all works by Park, Y. M.; Son, J. K.; Chung, H. J.; Sone, C.; Park, Y.