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What is Multiplication Noise in InP APDs about?

The document summarizes research on the multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes (APDs). It finds that: 1) The APDs achieve high gain-bandwidth products with thin, heavily doped multiplication regions, leading to very high electric fields near the p-n junction. However, high fields cause the electron and hole ionization coefficients of InP to converge, which should result in high multiplication noise. 2) Measurements find that the excess noise factors of these APDs

Author

MJ

Language

EN