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About this Materials Science article
Oxygen Incorporation Mechanism during Atomic Layer Deposition of Al2O3 onto H-Passivated Si(100)-2×1 by Hu, Z.; Turner, C.H. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Hu, Z.; Turner, C.H.
- Publisher
- American Chemical Society; American Chemical Society (ACS) (ISSN 1932-7447)
- Published
- 2007
- Field
- Materials Science (Physical Sciences)