Can I read Creation of Ordered Layers on Semiconductor Surfaces: An Ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces on EtoBox?

Creation of Ordered Layers on Semiconductor Surfaces: An Ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces by Mariana Amorim Fraga; Homero Santiago Maciel; Marcos Massi; Rodrigo Sávio Pessoa is a book available to read on EtoBox.

What is Creation of Ordered Layers on Semiconductor Surfaces: An Ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces about?

Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the "materials" aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to c

Author

Mariana Amorim Fraga; Homero Santiago Maciel; Marcos Massi; Rodrigo Sávio Pessoa

Publisher

INTECH Open Access Publisher

Published

2011

Language

EN

ISBN

9789533079684

Subjects

Technology, Stem