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Monte Carlo calculations were performed to determine the charge accumulation on threading edge dislocations in GaN as a function of dislocation density and background dopant density. Four possible core structures were examined that produce defect levels in the band gap and may act as electron or hole traps. The results indicate that charge accumulation and electrostatic interactions can change the relative stabilities of the different core structures. Structures with Ga and N vacancies are predicted to be s

Author

Jack Ryder

Language

EN