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Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors by Hsin-Ying Lee; Iang-Jeng Lin; Hir-Ming Shieh; Ching-Ting Lee is a Engineering article available to read on EtoBox.

What is Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors about?

The double-delta-doped In 0:5 (Al 0:7 Ga 0:3 ) 0:5 P/GaAs/In 0:3 Ga 0:7 As field-effect transistors (FETs) epitaxial layers were grown on (1 0 0)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both I DS -V DS characteristics and g m -V GS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.

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Author

Hsin-Ying Lee; Iang-Jeng Lin; Hir-Ming Shieh; Ching-Ting Lee

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)